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Other articles related with "negative bias stress"：
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128105 |
Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生) |
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Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress |
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Chin. Phys. B
2022 Vol.31 (12): 128105-128105
[Abstract]
(251)
[HTML 0 KB]
[PDF 879 KB]
(180)
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118102 |
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生) |
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Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress |
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Chin. Phys. B
2021 Vol.30 (11): 118102-118102
[Abstract]
(418)
[HTML 0 KB]
[PDF 1026 KB]
(58)
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88502 |
Chao-Yang Han(韩朝阳), Yuan Liu(刘远), Yu-Rong Liu(刘玉荣), Ya-Yi Chen(陈雅怡), Li Wang(王黎), Rong-Sheng Chen(陈荣盛) |
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Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors |
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Chin. Phys. B
2019 Vol.28 (8): 88502-088502
[Abstract]
(633)
[HTML 1 KB]
[PDF 558 KB]
(148)
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